Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors-Reference-Cited by-同舟云学术

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Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors

Published:1998-03-30 Issue:Part 1, No. 3B Volume:37 Page:1110-1115
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoon Sung-min,Kurita Yuji,Tokumitsu Eisuke,Ishiwara Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications;Topics in Applied Physics;2020

4. Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications;Topics in Applied Physics;2016

5. Frequency-output sensors-transducers based on unijunction transistors;Journal of Communications Technology and Electronics;2014-03

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