Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures-Reference-Cited by-同舟云学术

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Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures

Published:1998-03-30 Issue:Part 1, No. 3B Volume:37 Page:1202-1205
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Abe Katsuya,Watahiki Tatsuro,Yamada Akira,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature epitaxial growth of boron-doped silicon thin films;AIP Conference Proceedings;2018

2. Growth of Tetragonal Si via Plasma-Enhanced Epitaxy;Crystal Growth & Design;2017-07-10

3. Growth and Characterization of SiC Films by Hot-Wire Chemical Vapor Deposition at Low Substrate Temperature Using SiF4/CH4/H2Mixture;Japanese Journal of Applied Physics;2008-01-22

4. Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells;Japanese Journal of Applied Physics;2004-12-09

5. 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method;Japanese Journal of Applied Physics;2004-05-11

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