Hole-doping and Pressure Effects on the Metal–Insulator Transition in Single Crystals of Y1-xCaxTiO3(0.37 ≤x≤0.41)-Reference-Cited by-同舟云学术

Hole-doping and Pressure Effects on the Metal–Insulator Transition in Single Crystals of Y1-xCaxTiO3(0.37 ≤x≤0.41)

Published:2003-12-15 Issue:12 Volume:72 Page:3182-3188
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Tsubota Masami¹,Iga Fumitoshi¹,Nakano Toshihiro¹,Uchihira Kazuyuki¹,Kura Souichiro¹,Takemura Masaki¹,Bando Yoshio²,Umeo Kazunori¹,Takabatake Toshiro¹,Nishibori Eiji³,Takata Masaki³,Sakata Makoto³,Kato Kenichi⁴,Ohishi Yasuo⁴

Affiliation:

1. Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530

2. Department of Electrical Engineering, Kure National College of Technology, Kure, Hiroshima 737-8506

3. Department of Applied Physics, Nagoya University, Nagoya 464-8603

4. The Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.72.3182

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