High-Resolution Compton Profile of Si Using 29.5 keV Synchrotron-Radiation X-Rays-Reference-Cited by-同舟云学术

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High-Resolution Compton Profile of Si Using 29.5 keV Synchrotron-Radiation X-Rays

Published:1989-09-15 Issue:9 Volume:58 Page:3270-3279
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Sakai Nobuhiko¹,Shiotani Nobuhiro¹,Itoh Fumitake²,Mao Ou¹,Ito Masahisa¹,Kawata Hiroshi²,Amemiya Yoshiyuki³,Ando Masami³

Affiliation:

1. The Institute of Physical and Chemical Research

2. Institute for Materials Research, Tohoku University

3. Photon Factory, KEK

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.58.3270

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-positron correlations in silicon;Physical Review B;2000-04-15

2. Investigation of temperature dependence of Compton profiles in lithium;Solid State Communications;1999-04

3. Effects of self-interaction correction on momentum density in copper;Journal of Physics: Condensed Matter;1999-01-01

4. Compton profiles of Si: Pseudopotential calculation and reconstruction effects;Physical Review B;1998-08-15

5. Correlation Effects in the Compton Profile of Silicon;Physical Review Letters;1998-05-11

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