Switching Phenomena Observed on Ge-Se-In System
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/11/i=3/a=422/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microwave switching and AC conductivity of memory glass As10Ge15Te75;physica status solidi (a);1990-09-16
2. The role of thermal annealing in changing the interfacial microstructure of Ge-ZnSe heterojunctions;Journal of Physics D: Applied Physics;1977-03-11
3. The application of the capillarity model to the heterogeneous nucleation of zinc selenide upon (100) germanium surfaces;Thin Solid Films;1975-10
4. The discontinuous growth modes of zinc selenide deposited upon clean, restructured and oxygen-stabilized (100) germanium surfaces;Journal of Physics D: Applied Physics;1975-06-21
5. Some observations on the switching and memory phenomena occurring in p-Ge-n-ZnSe heterojunctions;Thin Solid Films;1973-09
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