ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy-Reference-Cited by-同舟云学术

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ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy

Published:1972-07 Issue:7 Volume:11 Page:1024-1031
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tamura Teiji,Moriizumi Toyosaka,Takahashi Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/11/i=7/a=1024/pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination;Microscopy and Microanalysis;2015-11-27

2. InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy;Infrared Physics & Technology;2013-05

3. Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling;Japanese Journal of Applied Physics;1990-06-20

4. Epitaxial growth of ZnTe on GaSb(100) by rf sputtering;Journal of Applied Physics;1989-07-15

5. Epitaxial Growth of ZnTe on GaAs(100) by RF Sputtering;Japanese Journal of Applied Physics;1989-02-20

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