Electron Spin Resonance Parameters in 6H Polytype of Silicon Carbide Crystal Doped with Boron-Reference-Cited by-同舟云学术

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Electron Spin Resonance Parameters in 6H Polytype of Silicon Carbide Crystal Doped with Boron

Published:1965-10 Issue:10 Volume:20 Page:1827-1833
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Toyama Masaharu¹

Affiliation:

1. Toshiba Central Research Laboratory

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.20.1827

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide;Semiconductor Science and Technology;1998-01-01

2. EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes;physica status solidi (a);1997-07

3. Electronic structure of the shallow boron acceptor in 6H-SiC:mA pulsed EPR/ENDOR study at 95 GHz;Physical Review B;1997-01-15

4. Cluster calculation of boron impurities in cubic SiC, substituting for Si and C sites;Semiconductor Science and Technology;1996-09-01

5. ENDOR investigation of the microscopic structure of the boron acceptor in 6H-SiC;Semiconductor Science and Technology;1993-07-01

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