Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon-Reference-Cited by-同舟云学术

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Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon

Published:2011-12-12 Issue:1 Volume:5 Page:015101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Nakaharai Shu,Iijima Tomohiko,Ogawa Shinichi,Miyazaki Hisao,Li Songlin,Tsukagoshi Kazuhito,Sato Shintaro,Yokoyama Naoki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=1/a=015101/pdf

Reference13 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Ultrahigh electron mobility in suspended graphene

5. Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

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1. Helium ion microscopy for low-damage characterization and sub-10 nm nanofabrication;AAPPS Bulletin;2022-07-08

2. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors;Chemical Society Reviews;2016

3. Localized charge carriers in graphene nanodevices;Applied Physics Reviews;2015-09

4. Graphene nanoribbons: Relevance of etching process;Journal of Applied Physics;2015-05-14

5. Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit;Japanese Journal of Applied Physics;2015-03-04

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