Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes

Published:2012-03-06 Issue:3 Volume:5 Page:032104
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Brinkley Stuart E.,Keraly Christopher Lalau,Sonoda Junichi,Weisbuch Claude,Speck Jim S.,Nakamura Shuji,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=3/a=032104/pdf

Reference16 articles.

1. Solid-state lighting: an energy-economics perspective

2. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

5. Prospects for LED lighting

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Micro-Size Light-Emitting Diode With Pentagon-Type Structure;IEEE Photonics Technology Letters;2021-10-01

2. Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing;Journal of Nanoscience and Nanotechnology;2019-04-01

3. Homoepitaxy of GaN Light-Emitting Diodes;Light-Emitting Diodes;2019

4. Design of patterned sapphire substrates in flip-chip LEDs for improvement of light-extraction efficiencies;Optical and Quantum Electronics;2018-03

5. Light Extraction Enhancement of GaN-Based Light-Emitting Diodes With Textured Sidewalls and ICP-Transferred Nanohemispherical Backside Reflector;IEEE Transactions on Electron Devices;2017-09

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