Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels-Reference-Cited by-同舟云学术

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Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels

Published:2012-04-16 Issue:5 Volume:5 Page:051001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Li Lei,Liu Justin P. C.,Liu Lei,Li Ding,Wang Lei,Wan Chenghao,Chen Weihua,Yang Zhijian,Xie Yahong,Hu Xiaodong,Zhang Guoyi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=5/a=051001/pdf

Reference21 articles.

1. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Solid-State Light Sources Getting Smart

4. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

5. Scattering of electrons at threading dislocations in GaN

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask;Applied Surface Science Advances;2023-10

2. Epitaxial lateral overgrowth of GaN using hexagonal patterned PECVD and wet transferred graphene masks by MOCVD;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

3. Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure;Micro & Nano Letters;2022-09-25

4. Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel;Materials Science in Semiconductor Processing;2021-11

5. Non-polar true-lateral GaN power diodes on foreign substrates;Applied Physics Letters;2021-05-24

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