Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System-Reference-Cited by-同舟云学术

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Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

Published:2012-03-16 Issue:4 Volume:5 Page:045001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Tarun Jean,Huang Shaoyun,Fukuma Yasuhiro,Idzuchi Hiroshi,Otani YoshiChika,Fukata Naoki,Ishibashi Koji,Oda Shunri

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=4/a=045001/pdf

Reference20 articles.

1. Electronic analog of the electro‐optic modulator

2. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

3. Electronic measurement and control of spin transport in silicon

4. Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

5. Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices;Japanese Journal of Applied Physics;2023-02-17

2. Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts;Applied Physics Letters;2017-08-07

3. Room-temperature spin transport in InAs nanowire lateral spin valve;RSC Advances;2016

4. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers;Nature Communications;2015-06-19

5. Characterizing the electron transport properties of a single 〈110〉 InAs nanowire;Applied Physics Express;2014-07-18

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