Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Author:

Song Min Yeong,Seo Yujeong,Kim Yeon Soo,Kim Hee Dong,An Ho-Myoung,Park Bae Ho,Sung Yun Mo,Kim Tae Geun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing;Discover Nano;2023-03-09

2. An artificial synapse based on Sr(Ti, Co)O3 films;Materials Today Communications;2022-12

3. Resistive switching in metal oxides for various applications;Nanomaterials for Sensing and Optoelectronic Applications;2022

4. Interface-Type Resistive Switching in Perovskite Materials;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16

5. High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3;Journal of Materials Chemistry C;2021

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