Investigation of Discrete Dopant Fluctuation Effects in Sub-45-nm Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell-Reference-Cited by-同舟云学术

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Investigation of Discrete Dopant Fluctuation Effects in Sub-45-nm Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell

Published:2009-02-20 Issue:2 Volume:48 Page:021207
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liao Yi-Ying,Horng Sheng-Fu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference4 articles.

1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

2. Modeling statistical dopant fluctuations in MOS transistors

3. Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures

4. An analytical retention model for SONOS nonvolatile memory devices in the excess electron state

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Characteristics of Nanoscale NAND Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices Fabricated on SOI Substrates;Journal of Nanoscience and Nanotechnology;2011-08-01

2. Phase change memory technology;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03

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