Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Kink power in weakly index guided semiconductor lasers
2. Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-μm InGaAs-InGaAsP-InGaP SQW FP-LDs
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4. Comprehensive modeling of diode arrays and broad-area devices with applications to lateral index tailoring
5. Improvement of the kink-free operation in ridge-waveguide laser diodes due to coupling of the optical field to the metal layers outside the ridge
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1. Effect of Flat Region between Mesa and Gratings in Ridge-Type Semiconductor Lasers with Transversal Diffraction Gratings;2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2023-09-18
2. Single Transverse Mode Operation of Over 10 μm Wide Ridge-Type Semiconductor Lasers with Transversal Diffraction Gratings;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12
3. Simulation of a ridge-type semiconductor laser with transversal diffraction gratings;Optical and Quantum Electronics;2022-02-09
4. Simulation of a Ridge-Type Semiconductor Laser with Transversal Diffraction Gratings;2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2021-09-13
5. Fundamentals of Semiconductor Lasers;Fundamentals of Semiconductor Lasers;2014-08-28
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