Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Characteristics of HfO/sub 2/ pMOSFET prepared by B/sub 2/H/sub 6/ plasma doping and KrF excimer laser annealing
2. Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
3. Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics
4. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
5. Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films
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