Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio-Reference-Cited by-同舟云学术

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Development of Highly Reliable Point Source Infrared Light-Emitting Diodes and Analysis Using a New Parameter of Dark Area Ratio

Published:2009-10-20 Issue:10 Volume:48 Page:102102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kato Toshihiro,Hobo Kenji,Aikawa Moritaka,Sone Hidetoshi,Hirotani Masumi,Harada Haruyuki,Saka Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. High power, high speed surface emitting LEDs with an InGaAs quantum well

2. GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD

3. Defect structure introduced during operation of heterojunction GaAs lasers

4. Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes

5. Defect structure of degraded GaAlAs-GaAs double heterojunction lasers

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