Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference50 articles.
1. Recent status and future direction of EUV resist technology
2. Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool
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4. A Resist Material Study for LWR and Resolution Improvement in EUV Lithography
5. Progress in EUV Resist Development
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2. Effects of deprotonation efficiency of protected units on line edge roughness and stochastic defect generation in chemically amplified resist processes for 11 nm node of extreme ultraviolet lithography;Japanese Journal of Applied Physics;2014-10-20
3. Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography;Japanese Journal of Applied Physics;2014-07-28
4. Dependence of stochastic defect generation on quantum efficiency of acid generation and effective reaction radius for deprotection in chemically amplified resist process using extreme ultraviolet lithography;Japanese Journal of Applied Physics;2014-06-23
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