A Dual-Gate Memory Cell with Two Inter-Poly Oxides-Reference-Cited by-同舟云学术

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A Dual-Gate Memory Cell with Two Inter-Poly Oxides

Published:2009-04-20 Issue:4 Volume:48 Page:04C058
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Raguet Jean-René,Calenzo Patrick,Laffont Romain,Deleruyelle Damien,Bouchakour Rachid,Bidal Virginie,Regnier Arnaud,Niel Stephan,Fornara Pascal,Mirabel Jean-Michel

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference5 articles.

1. Optimum design of dual-control gate cell for high-density EEPROM's

2. New EEPROM concept for single bit operation

3. An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell

4. Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

5. Modeling and simulation of stress-induced leakage current in ultrathin SiO/sub 2/ films

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