Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Simulation of the Esaki-tunneling FET
2. A vertical MOS-gated Esaki tunneling transistor in silicon
3. Gate-controlled resonant interband tunneling in silicon
4. CONTUNT: Thin SOI control tunneling transistor
5. Silicon surface tunnel transistor
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