Vacancy Generation in Si During Solid–Liquid Transition Observed by Positron Annihilation Spectroscopy-Reference-Cited by-同舟云学术

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Vacancy Generation in Si During Solid–Liquid Transition Observed by Positron Annihilation Spectroscopy

Published:2009-03-05 Issue:3 Volume:48 Page:030203
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maekawa Masaki,Kawasuso Atsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Formation of Stacking Fault Tetrahedra in Silicon Rapidly Solidified from Melt

2. In-situ HRTEM observation of the melting-crystallization process of silicon

3. In SituHigh-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon

4. Atomic diffusion at solid/liquid interface of silicon: Transition layer and defect formation

5. Molecular-dynamics simulations of crystal growth from melted Si: Self-interstitial formation and migration

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron states at a lithium-adsorbed Al(100) surface: Two-component density functional theory simulation;Physical Review B;2015-03-06

2. (Invited) Si Crystal Growth from a Melt: The Secrets Behind the v/G Criterion;ECS Transactions;2013-03-15

3. Silicon Single Crystal Growth from a Melt: On the Impact of Dopants on thev/GCriterion;ECS Journal of Solid State Science and Technology;2013

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