Progress in Extending Immersion Lithography for the 32 nm Node and Beyond
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference17 articles.
1. Latest developments on immersion exposure systems
2. Imaging performance optimization for hyper-NA scanner systems in high volume production
3. Double patterning for 32nm and below: an update
4. 22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP)
5. Alternative process schemes for double patterning that eliminate the intermediate etch step
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3. Application of Extreme Ultraviolet Lithography to Test Chip Fabrication;Japanese Journal of Applied Physics;2011-06-01
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