A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects
2. Two-Dimensional Analytical Threshold Voltage Model of Nanoscale Fully Depleted SOI MOSFET With Electrically Induced S/D Extensions
3. Shielded channel double-gate MOSFET: a novel device for reliable nanoscale CMOS applications
4. Controlling Short-Channel Effects in Deep-Submicron SOI MOSFETs for Improved Reliability: A Review
5. A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain
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1. A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement;Current Applied Physics;2013-06
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