Ridge-Type Semiconductor Lasers with Optical Antiguiding Layers for Horizontal Transverse Modes: Dependence on Step Positions-Reference-Cited by-同舟云学术

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Ridge-Type Semiconductor Lasers with Optical Antiguiding Layers for Horizontal Transverse Modes: Dependence on Step Positions

Published:2009-04-20 Issue:4 Volume:48 Page:042104
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shomura Naoki,Numai Takahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Kink power in weakly index guided semiconductor lasers

2. Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-μm InGaAs-InGaAsP-InGaP SQW FP-LDs

3. Nonlinear mechanisms of filamentation in broad-area semiconductor lasers

4. Comprehensive modeling of diode arrays and broad-area devices with applications to lateral index tailoring

5. Improvement of the kink-free operation in ridge-waveguide laser diodes due to coupling of the optical field to the metal layers outside the ridge

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1. Fundamentals of Semiconductor Lasers;Fundamentals of Semiconductor Lasers;2014-08-28

2. Fabry–Perot Laser Diodes;Laser Diodes and their Applications to Communications and Information Processing;2010-11

3. Optical Waveguides;Laser Diodes and their Applications to Communications and Information Processing;2010-11

4. Simulation of Ridge-Type Semiconductor Lasers with Selectively Proton-Implanted Cladding Layers;Japanese Journal of Applied Physics;2010-01-20

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