Reduction of Deep Level Impurities in Zn-Doped $\bf Al_{\ninmbi x}Ga_{1-{\ninmbi x}}As$ by a Co-Dopant Technique-Reference-Cited by-同舟云学术

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Reduction of Deep Level Impurities in Zn-Doped $\bf Al_{\ninmbi x}Ga_{1-{\ninmbi x}}As$ by a Co-Dopant Technique

Published:1995-04-15 Issue:Part 2, No. 4B Volume:34 Page:L476-L478
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen J. C.,Huang Z. C.,Yu Tao,Chen H. K.,Lee K. J.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance Schottky contacts on Se-doped AlxGa1−xAs by cryogenic processing;Solid-State Electronics;1997-12

2. Improved quality of AlxGa1−x as grown on se-Doped AlxGa1−x as substrate-Layers by metalorganic chemical vapor deposition;Journal of Electronic Materials;1996-07

3. High Quality AlGaAs Regrowth on Oxide-Free AlxGa1-xAs (x=0.26) by Metalorganic Chemical Vapor Deposition;MRS Proceedings;1995

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