Interfacial Reactions in Al-Alloy/Ti/Silicon-Dioxide-Based Substrate Structures for Multilayered Interconnects
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Interfacial reaction of intermetallic compounds of ultrasonic-assisted brazed joints between dissimilar alloys of Ti 6Al 4V and Al 4Cu 1Mg;Ultrasonics Sonochemistry;2011-09
3. The effect of contact resistance on current crowding and electromigration in ULSI multi-level interconnects;Materials Chemistry and Physics;2003-01
4. A Robust Multilevel Interconnect Module for Subquartermicrometer Complementary Metal Oxide Semiconductor Technology Integration;Journal of The Electrochemical Society;2002
5. Electromigration performance of AlCu/Ti and AlCu/Ti/TiN/Ti metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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