In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films;Journal of Materials Research;2005-07-01
2. In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1−xGex on Si(001);Thin Solid Films;1998-12
3. Interplay between Planar Defects and Threading Dislocations in GaAs-on-Si;Materials Science Forum;1998-11
4. In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-09
5. Crystallization process of amorphous GaAs buffer layers for the heteroepitaxial growth of GaAs on Si(0 0 1) substrates;Journal of Crystal Growth;1997-04
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