Back-Gating Effects on the $\bf Ga_{\bf 0.1}In_{\bf 0.9}P/InP/InGaAs$ High-Electron-Mobility Transistor
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Published:1995-07-15
Issue:Part 1, No. 7A
Volume:34
Page:3500-3503
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Lin Kun-Chuan,Chang Chun-Yen,Wu Chang-Cherng,Chen Horng-Dar,Chen Po-An,Chan Shih-Hsiung,Wu Janne-Wha,Chang E-Yi
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering