Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells-Reference-Cited by-同舟云学术

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Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells

Published:1995-05-15 Issue:Part 1, No. 5A Volume:34 Page:2241-2246
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Toshiyuki,Haraguchi Masanobu,Fukui Masuo,Yamaguchi Masahito,HitoshiKubo ,Hamaguchi Chihiro,ShinichiNakashima

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates;SPIE Proceedings;2013-12-18

2. Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells;Japanese Journal of Applied Physics;1996-04-15

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