Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure-Reference-Cited by-同舟云学术

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Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low Pressure

Published:1995-06-01 Issue:Part 2, No. 6A Volume:34 Page:L660-L663
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kretz Thierry,Pribat Didier,Legagneux Pierre,Plais François,Huet Odile,Bisaro Renato

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Mechanism for Incline Crystal Growth and Carrier Path Transistion in Extremely Highly Doped Polymorphous Silicon Thin Film Formated by Neutral Beam Assisted CVD Process Near Room Temperature;ECS Transactions;2013-05-03

2. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-20

3. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-01

4. Growth mechanisms of crystallites in the mixed-phase silicon films deposited by low-pressure chemical vapor deposition;Thin Solid Films;2000-11

5. Excimer laser crystallization techniques for polysilicon TFTs;Applied Surface Science;2000-02

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