Band Edge Structure Transformation Due to Ferroelectric Transition in Pb1-xGexTe Alloy Semiconductors-Reference-Cited by-同舟云学术

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Band Edge Structure Transformation Due to Ferroelectric Transition in Pb1-xGexTe Alloy Semiconductors

Published:1982-06 Issue:6 Volume:51 Page:1857-1864
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Takaoka Sadao¹,Murase Kazuo¹

Affiliation:

1. Department of Physics, Osaka University

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.51.1857

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Ferroelectric Rashba Semiconductor;Advanced Materials;2023-12-24

2. Lead Telluride;Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions;2019

3. On the resonant level of chromium in the rhombohedral and cubic phases of Pb1 − x − y Ge x Cr y Te alloys;Semiconductors;2013-06

4. Ultrafast critical dynamics of a ferroelectric phase transition inPb1−xGexTe;Physical Review B;2007-01-23

5. Femtosecond pump–probe study of coherent soft phonon in Pb1−xGexTe ferroelectrics;Journal of Luminescence;2006-07

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