Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2011-10-20 Issue:10 Volume:50 Page:10PB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kwon Hyuk-Min,Bok Jung-Deuk,Han In-Shik,Park Sang-Uk,Jung Yi-Jung,Jang Jae-Hyung,Ko Sung-Yong,Lee Won-Mook,Lee Ga-Won,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference12 articles.

1. Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

2. Influence of Dislocations on Low Frequency Noise in nMOSFETs Fabricated on Tensile Strained Virtual Substrates

3. On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors

4. Impact strain engineering on gate stack quality and reliability

5. Electrical noise and RTS fluctuations in advanced CMOS devices

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