Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films-Reference-Cited by-同舟云学术

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Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films

Published:2011-08-22 Issue:8 Volume:50 Page:08LB11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takahashi Masahiko,Nakamura Yoshiaki,Kikkawa Jun,Nakatsuka Osamu,Zaima Shigeaki,Sakai Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Selective growth of Ge islands on nanometer-scale patterned SiO2∕Si substrate by molecular beam epitaxy

2. Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2∕Si substrates by high-resolution transmission electron microscopy

3. Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates

4. Multidimensional quantum well laser and temperature dependence of its threshold current

5. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

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1. Comprehensive Elucidation of Grain Boundary Behavior in All‐Inorganic Halide Perovskites by Scanning Probe Microscopy;Advanced Materials Interfaces;2020-04

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