Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
2. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
3. Accelerated crucible rotation: A novel stirring technique in high-temperature solution growth
4. Transport phenomena in crystal growth from solution
5. Carbon solubility in solid and liquid silicon—A review with reference to eutectic equilibrium
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1. Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method;ACS Omega;2023-06-22
2. Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2023-04
3. Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method;Journal of Crystal Growth;2022-02
4. Density, surface tension, and viscosity of liquid Si–Cr alloys and influence on temperature and fluid flow during solution growth of SiC;The Journal of Chemical Thermodynamics;2021-09
5. Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth;CrystEngComm;2021
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