Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology-Reference-Cited by-同舟云学术

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Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology

Published:2011-08-22 Issue:8 Volume:50 Page:08JE07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Marneffe Jean-François de,Lazzarino Frédéric,Goossens Danny,Vandervorst Alain,Richard Olivier,Shamiryan Denis,Xu Kaidong,Truffert Vincent,Boullart Werner

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference4 articles.

1. Ultimate contact hole resolution using immersion lithography with line/space imaging

2. Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

3. A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond

4. The metal hard-mask approach for contact patterning

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics;Journal of Applied Physics;2015-10-07

2. Controlling Asymmetric Photoresist Feature Dimensions during Plasma-Assisted Shrink;Plasma Processes and Polymers;2014-05-20

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