Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures-Reference-Cited by-同舟云学术

Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures

Published:2011-05-20 Issue:5 Volume:50 Page:05FE06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bayramov Farid H.,Irmer Gert,Toporov Vladimir V.,Bairamov Bakhysh H.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference36 articles.

1. On the Coupling between Optical Lattice Vibrations and Carrier Plasma Oscillations in Polar Semiconductors

2. Coupling of Plasmons to Polar Phonons in Degenerate Semiconductors

3. Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs

4. Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriers

5. Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy

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