Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique-Reference-Cited by-同舟云学术

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Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Published:2011-06-20 Issue:6 Volume:50 Page:06GF21
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Liang-Chen,Huang Kuo-Hsun,Wei Jia-An,Suen Yuen-Wuu,Liu Ting-Wei,Chen Chia-Chun,Chen Li-Chyong,Chen Kuei-Hsien

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. Nanowire electronic and optoelectronic devices

2. Gallium Nitride Nanowire Nanodevices

3. Logic Gates and Computation from Assembled Nanowire Building Blocks

4. Current rectification in a single GaN nanowire with a well-defined p–n junction

5. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel;IEEE Transactions on Electron Devices;2019-03

2. Gas Sensing with Bare and Graphene-covered Optical Nano-Antenna Structures;Scientific Reports;2016-02-17

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