Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates
2. Spectroscopic Measurement of Spin-dependent Resonant Tunneling through a 3D Disorder: The Case ofMnAs/GaAs/MnAsJunctions
3. Epitaxially grown MnAs∕GaAs lateral spin valves
4. Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature
5. Electromotive force and huge magnetoresistance in magnetic tunnel junctions
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1. Analyses of magnetization switching and magnetic domains in lateral MnAs nanowires in combination with structural characterization;Japanese Journal of Applied Physics;2017-05-12
2. Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates;Applied Physics Letters;2016-01-25
3. Analysis of magnetic random telegraph noise in individual arrangements of a small number of coupled MnAs nanoclusters;Physical Review B;2015-10-06
4. Selective-area growth and magnetic reversals of ferromagnetic nanoclusters on semiconducting substrate for magnetic logic applications;physica status solidi (b);2015-06-13
5. Selective-area growth and magnetic characterization of lateral MnAs nanowires;Journal of Crystal Growth;2015-03
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