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Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2Stack of Asymmetric Tunnel Barrier

  • Published:2011-05-20 Issue:5 Volume:50 Page:05EF03
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Terry Tai-Jui,Lu Tien-Lin,Wu Chien-Hung,Liu Yu-Cheng,Hung Shih-Wei,Hsieh Ing-Jar,Kuo Cheng-Tzu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-07

2. Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application;Japanese Journal of Applied Physics;2013-04-01

3. Speed Enhancement of WSi$_{2}$ Nanocrystal Memory with Barrier-Engineered Si$_{3}$N$_{4}$/HfAlO Tunnel Layer;Japanese Journal of Applied Physics;2012-06-20

4. Speed Enhancement of WSi2Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer;Japanese Journal of Applied Physics;2012-06-01
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