Controllability of Electrical Conductivity by Oxygen Vacancies and Charge Carrier Trapping at Interface between CoO and Electrodes-Reference-Cited by-同舟云学术

Controllability of Electrical Conductivity by Oxygen Vacancies and Charge Carrier Trapping at Interface between CoO and Electrodes

Published:2011-07-20 Issue:7 Volume:50 Page:071101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kishi Hirofumi,Abdulla Sarhan Abdulla Ali,Sakaue Mamoru,Aspera Susan Meñez,David Melanie Yadao,Nakanishi Hiroshi,Kasai Hideaki,Tamai Yukio,Ohnishi Shigeo,Awaya Nobuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications

2. Conductivity switching characteristics and reset currents in NiO films

3. Reproducible resistance switching in polycrystalline NiO films

4. Reproducible switching effect in thin oxide films for memory applications

5. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

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