Phase-Change Characteristics and Crystal Structure in Multi Stacked GeTe/InTe Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. Low-cost and nanoscale non-volatile memory concept for future silicon chips
2. Phase Change Materials and Their Application to Nonvolatile Memories
3. Nanosecond switching in GeTe phase change memory cells
4. Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
5. Nitrogen-Doping Effect on Ge2Sb2Te5Chalcogenide Alloy Films during Annealing
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1. GeTe/CrSb2Te superlattice-like thin film for excellent thermal stability and high phase change speed;Journal of Alloys and Compounds;2023-05
2. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
3. Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process;Journal of Applied Physics;2017-03-14
4. Nanopatterning of GeTe phase change films via heated-probe lithography;Nanoscale;2017
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