Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se2Thin Films with Photoisothermal Capacitance Transient Spectroscopy-Reference-Cited by-同舟云学术

Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se2Thin Films with Photoisothermal Capacitance Transient Spectroscopy

Published:2011-02-07 Issue:2 Volume:50 Page:020203
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Hiroshi,Minemoto Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 solar cells

2. The ‘defected layer’ and the mechanism of the interface-related metastable behavior in the ZnO/CdS/Cu(In,Ga)Se2 devices

3. Capacitance profiling in the CIGS solar cells

4. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

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