Effect of Ultrahigh-Density Ionization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser-Reference-Cited by-同舟云学术

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Effect of Ultrahigh-Density Ionization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser

Published:2012-09-06 Issue:9 Volume:5 Page:096701
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Okamoto Kazumasa,Kozawa Takahiro,Oikawa Keita,Hatsui Takaki,Nagasono Mitsuru,Kameshima Takashi,Togashi Tadashi,Tono Kensuke,Yabashi Makina,Kimura Hiroaki,Senba Yasunori,Ohashi Haruhiko,Fujiyoshi Ryoko,Sumiyoshi Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=9/a=096701/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation;Applied Physics Express;2021-05-12

2. Lloyd’s mirror interference lithography with EUV radiation from a high-harmonic source;Applied Physics Express;2016-06-09

3. Modeling and simulation of acid generation in anion-bound chemically amplified resists used for extreme ultraviolet lithography;Japanese Journal of Applied Physics;2015-02-12

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