Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors-Reference-Cited by-同舟云学术

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Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors

Published:1990-12-20 Issue:Part 2, No. 12 Volume:29 Page:L2445-L2448
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoh Kanji,Moriuchi Toshiaki,Inoue Masataka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaSb Buffer Layers for Sb-Based Transistors;Journal of Electronic Materials;2010-06-12

2. Materials growth for InAs high electron mobility transistors and circuits;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

3. Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well;IEEE Electron Device Letters;1999-03

4. AlSb/InAs HEMT's for low-voltage, high-speed applications;IEEE Transactions on Electron Devices;1998

5. Preparation of GaSb(100) surfaces by ultraviolet irradiation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-07

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