Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition withIn-situXPS Measurement-Reference-Cited by-同舟云学术

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Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition withIn-situXPS Measurement

Published:1990-11-20 Issue:Part 1, No. 11 Volume:29 Page:2657-2661
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawamoto Hideaki,Sakaue Hiroyuki,Takehiro Shinobu,Horiike Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A quantitative XPS examination of UV induced surface modification of TiO2 sorbents for the increased saturation capacity of sulfur heterocycles;Fuel;2019-02

2. Effect of residual H 2 O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH 3;Applied Surface Science;2014-09

3. Stability and etching of titanium oxynitride films in hydrogen microwave plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-07

4. Chemical Vapor Deposition;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

5. Metallization;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

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