InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Published:1990-12-20 Issue:Part 2, No. 12 Volume:29 Page:L2414-L2416
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Taira Kenichi,Nakamura Fumihiko,Hase Ichiro,Kawai Hiroji,Mori Yoshifumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction Hot-Electron Transistor;Complete Guide to Semiconductor Devices;2010-11-03

2. The growth of antimonides by MOVPE;Progress in Crystal Growth and Characterization of Materials;1997-01

3. Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor;Japanese Journal of Applied Physics;1992-03-15

4. Thermionic emission of Γ andLelectrons in the GaSb/InAs hot‐electron transistors;Applied Physics Letters;1991-09-30

5. InAs quantum‐well‐base InAs/GaSb hot‐electron transistors;Journal of Applied Physics;1991-04-15

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