RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride;Nano Letters;2020-02-27
3. Molecular Beam Epitaxy of Transition Metal Dichalcogenides;Molecular Beam Epitaxy;2018
4. Evolution of Surface and Interface Structures in Molecular-Beam Epitaxy of MoSe2 on GaAs(111)A and (111)B;Crystal Growth & Design;2016-12-22
5. Growth of MoSe2 thin films with Van der Waals epitaxy;Journal of Crystal Growth;1991-05
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