Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy

Published:1990-03-20 Issue:Part 1, No. 3 Volume:29 Page:479-483
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yasuda Kazuhito,Ekawa Mitsuru,Matsui Nobuyuki,Sone Syuji,Sugiura Yoshiyuki,Tanaka Akikazu,Saji Manabu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature growth and n-type doping of CdTe by the remote-plasma-assisted metalorganic chemical vapor deposition method;Vacuum;2000-11

2. Structure and Surface Properties of Metalorganic Vapor Phase Epitaxial CdTe and HgCdTe(111)B Layers Grown on Vicinal GaAs(100) Subatrates;Japanese Journal of Applied Physics;1999-10-15

3. Growth and doping studies of CdTe epilayers on GaAs substrates by low-pressure plasma-radical-assisted metalorganic chemical vapor deposition;Journal of Crystal Growth;1999-04

4. Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-01

5. Model to analyse compositional distribution on the substrate surface for MOVPE grown ternary alloys;Journal of Crystal Growth;1998-05

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