Photovoltaic,I-VandC-VCharacteristics of SnO2/SiO2/a-Si:H/mc-Si:H Structures-Reference-Cited by-同舟云学术

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Photovoltaic,I-VandC-VCharacteristics of SnO2/SiO2/a-Si:H/mc-Si:H Structures

Published:1990-11-20 Issue:Part 2, No. 11 Volume:29 Page:L2080-L2081
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Faraji Mohammad,Babras Suvarna,Mirzapour Safar,Agashe Chitra,Rajarshi Sharadchandra,Dusane Rajiv,Ghaisas Subhash

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of Zn concentration on some physical properties of tin oxide films obtained by ultrasonic spray pyrolysis;Materials Letters;2004-11

2. Synthesis of a-Si:H/μc-Si:H multilayer structures by hot wire chemical vapor deposition (HW-CVD) technique: Study of opto-electronic and photovoltaic properties;Solar Energy Materials and Solar Cells;2002-03-01

3. Preparation and properties of sprayed undoped and fluorine doped tin oxide films;Materials Science and Engineering: B;1999-01

4. Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H);MRS Proceedings;1992

5. Effect of Sn incorporation on the growth mechanism of sprayed SnO2films;Journal of Applied Physics;1991-12-15

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