Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100);Journal of Crystal Growth;2015-05
2. Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-09
3. (Invited) P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS;ECS Transactions;2014-03-26
4. Defect reduction of GaAs/Si epitaxy by aspect ratio trapping;Journal of Applied Physics;2008-05-15
5. Initial Buffer Layers on the Growth of InGaP on Si by MBE;MRS Proceedings;1996
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