The Most Essential Factor for High-Speed, Low-Power0.35 µmComplementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
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Published:1997-11-15
Issue:Part 1, No. 11
Volume:36
Page:6699-6705
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yoshino Akira,Kumagai Kouichi,Hamatake Nobuhisa,Kurosawa Susumu,Okumura Koichiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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1. Isolation;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27